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              SFF2001GS PDF Datasheet浏览和下载

              型号.:
              SFF2001GS
              PDF下载:
              下载PDF文件
              内容描述:
              [20.0 Amperes Insulated Dual Series Connection Super Fast Recovery Rectifiers]
              文件大?。?/dt>
              805 K
              文件页数:
              2 Pages
              品牌Logo:
              品牌名称:
              THINKISEMI [ Thinki Semiconductor Co., Ltd. ]
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               浏览型号SFF2001GS的Datasheet PDF文件第2页 
              SFF2001GS thru SFF2008GS
              Pb Free Plating Product
              SFF2001GS thru SFF2008GS
              Pb
              20.0 Amperes Insulated Dual Series Connection Super Fast Recovery Rectifiers
              Application
              Mechanical Data
              Case: ITO-220AB full plastic isolated package
              Epoxy: UL 94V-0 rate flame retardant
              Terminals: Solderable per MIL-STD-202
              method 208
              Polarity: As marked on diode body
              Mounting position: Any
              Weight: 1.90 gram approximately
              .055(1.4)
              .039(1.0)
              .035(0.9)
              .011(0.3)
              .1
              (2.55)
              .1
              (2.55)
              .161(4.1)MAX
              .543(13.8)
              .512(13.0)
              Automotive Inverters and Solar Inverters
              Plating Power Supply,SMPS and UPS
              Car Audio Amplifiers and Sound Device Systems
              .606(15.4)
              .583(14.8)
              Features
              Super fast switching for high efficiency
              Low forward voltage drop
              High current capability
              Low reverse leakage current
              High surge current capability
              ITO-220AB/TO-220F-3L
              .112(2.85)
              .100(2.55)
              .272(6.9)
              .248(6.3)
              .406(10.3)
              .381(9.7)
              .134(3.4)
              .118(3.0)
              Unit : inch (mm)
              .189(4.8)
              .165(4.2)
              .130(3.3)
              .114(2.9)
              .071(1.8)
              .055(1.4)
              .114(2.9)
              .098(2.5)
              .032(.8)
              MAX
              Case
              Case
              Case
              Case
              Negative
              Positive
              Common Cathode Common Anode
              Suffix "G"
              Suffix "GA"
              Doubler
              Tandem Polarity
              Suffix "GD"
              Series
              Tandem Polarity
              Suffix "GS"
              MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
              (T
              A
              =25°C unless otherwise noted)
              SFF
              PARAMETER
              SYMBOL 2001
              GS
              SFF
              2002
              GS
              SFF
              2003
              GS
              SFF
              2004
              GS
              SFF
              2005
              GS
              SFF
              2006
              GS
              SFF
              2007
              GS
              SFF
              2008 UNIT
              GS
              Maximum repetitive peak reverse voltage
              Maximum RMS voltage
              Maximum DC blocking voltage
              Maximum average forward rectified current
              Peak forward surge current, 8.3 ms single half sine-wave
              superimposed on rated load
              Maximum instantaneous forward voltage
              @ 10 A
              Maximum reverse current @ rated V
              R
              Maximum reverse recovery time (Note 2)
              Typical junction capacitance (Note 3)
              Typical thermal resistance
              Operating junction temperature range
              Storage temperature range
              Note 1: Pulse test with PW=300μs, 1% duty cycle
              Note 2: Test conditions: I
              F
              =0.5A, I
              R
              =1.0A, I
              RR
              =0.25A.
              (Note 1)
              T
              J
              =25°C
              T
              J
              =125°C
              V
              RRM
              V
              RMS
              V
              DC
              I
              F(AV)
              I
              FSM
              V
              F
              I
              R
              t
              rr
              C
              J
              R
              θJC
              T
              J
              T
              STG
              50
              35
              50
              100
              70
              100
              150
              105
              150
              200
              140
              200
              20
              150
              300
              210
              300
              400
              280
              400
              500
              350
              500
              600
              420
              600
              V
              V
              V
              A
              A
              0.975
              10
              400
              35
              90
              2.5
              - 55 to +150
              - 55 to +150
              1.3
              1.7
              V
              μA
              ns
              pF
              °C/W
              °C
              °C
              Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
              Rev.08T
              ? 1995 Thinki Semiconductor Co., Ltd.
              Page 1/2
              http://www.thinkisemi.com.tw/

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